Invention Grant
- Patent Title: Method of monitoring semiconductor process
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Application No.: US16827720Application Date: 2020-03-24
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Publication No.: US11887898B2Publication Date: 2024-01-30
- Inventor: Chien-Yen Liu , Cheng-Chieh Shen , Chung-Hsin Lai , Chen-Wei Liao
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Priority: TW 8138303 2019.10.23
- Main IPC: G01N21/95
- IPC: G01N21/95 ; H01L21/66 ; G06T7/00

Abstract:
A method of monitoring a semiconductor process includes the following steps. A process parameter is set to a first condition. A first process is performed to form a first film layer on a first wafer. The first film layer does not cover a wafer edge region of the first wafer. The first wafer having the first film layer is photographed by an image capturing device to obtain a first wafer image. Image recognition is performed to the first wafer image to obtain first data. Whether a position of the first film layer is offset is determined according to the first data.
Public/Granted literature
- US20210125880A1 METHOD OF MONITORING SEMICONDUCTOR PROCESS Public/Granted day:2021-04-29
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