Invention Grant
- Patent Title: Diode
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Application No.: US17881106Application Date: 2022-08-04
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Publication No.: US11887980B2Publication Date: 2024-01-30
- Inventor: Toshinari Sasaki
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Maier & Maier, PLLC
- Priority: JP 17203812 2017.10.20
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/02 ; G09G3/20 ; H01L29/739 ; H01L29/861 ; H01L29/66 ; H01L29/45 ; H01L29/872 ; H01L23/482 ; H01L23/485 ; H01L29/423 ; H01L29/24
Abstract:
A diode having a simple structure and a simple manufacturing method of the diode are provided. A diode including: a semiconductor layer having a first region and a second region having a resistance lower than a resistance of the first region; a first insulating layer having a first aperture portion and a second aperture portion and covering the semiconductor layer other than the first aperture and the second aperture, the first aperture portion exposing the semiconductor layer in the first region, the second aperture portion exposing the semiconductor layer in the second region; a first conductive layer connected to the semiconductor layer in the first aperture portion and overlapping with the semiconductor layer in the first region via the first insulating layer in a planar view; and a second conductive layer connected to the semiconductor layer in the second aperture.
Public/Granted literature
- US20220375924A1 DIODE, TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2022-11-24
Information query
IPC分类:
