公开(公告)号：US11935898B2

公开(公告)日：2024-03-19

申请号：US17031999

申请日：2020-09-25

Applicant: Japan Display Inc.

Inventor： Tatsuya Toda ,  Toshinari Sasaki ,  Masayoshi Fuchi

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/3266 ,  H10K59/12 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131

CPC classification number: H01L27/124 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/3266 ,  H01L27/1259 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  G02F1/136295 ,  G09G2300/0861 ,  H01L27/1225 ,  H01L27/1255 ,  H10K59/1201

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US11437363B2

公开(公告)日：2022-09-06

申请号：US16845289

申请日：2020-04-10

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki

IPC: H01L23/62 ,  H01L27/02 ,  G09G3/20 ,  H01L29/739 ,  H01L29/861 ,  H01L29/66 ,  H01L29/45 ,  H01L29/872 ,  H01L23/482 ,  H01L23/485 ,  H01L29/423 ,  H01L29/06 ,  H01L29/24

Abstract: A diode having a simple structure and a simple manufacturing method of the diode are provided. A diode including: a semiconductor layer having a first region and a second region having a resistance lower than a resistance of the first region; a first insulating layer having a first aperture portion and a second aperture portion and covering the semiconductor layer other than the first aperture and the second aperture, the first aperture portion exposing the semiconductor layer in the first region, the second aperture portion exposing the semiconductor layer in the second region; a first conductive layer connected to the semiconductor layer in the first aperture portion and overlapping with the semiconductor layer in the first region via the first insulating layer in a planar view; and a second conductive layer connected to the semiconductor layer in the second aperture.

公开(公告)号：US10714507B2

公开(公告)日：2020-07-14

申请号：US16385015

申请日：2019-04-16

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki ,  Shinichiro Oka ,  Takuma Nishinohara

IPC: H01L27/12 ,  G06F3/046 ,  G06F3/041 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/044

Abstract: A semiconductor device includes a first resin layer, one or more first wirings above the first resin layer, a second resin layer above the first wiring, the second resin layer including a first opening part, a transistor above the second resin layer, the transistor including a semiconductor layer, a gate insulation layer, and a gate electrode layer; and a second wiring above the second resin layer, the second wiring being connected to the transistor and connected to the first wiring via the first opening part.

公开(公告)号：US10304863B2

公开(公告)日：2019-05-28

申请号：US15698701

申请日：2017-09-08

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki ,  Shinichiro Oka ,  Takuma Nishinohara

IPC: H01L27/12 ,  G06F3/041 ,  G06F3/044 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/1345 ,  G02F1/1368

Abstract: A semiconductor device includes a first resin layer, one or more first wirings above the first resin layer, a second resin layer above the first wiring, the second resin layer including a first opening part, a transistor above the second resin layer, the transistor including a semiconductor layer, a gate insulation layer, and a gate electrode layer; and a second wiring above the second resin layer, the second wiring being connected to the transistor and connected to the first wiring via the first opening part.

公开(公告)号：US10263015B2

公开(公告)日：2019-04-16

申请号：US15443079

申请日：2017-02-27

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/475 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes a first electrode, a first insulating layer on the first electrode, a second electrode on the first insulating layer, a second insulating layer on the second electrode, a first opening in the first insulating layer, the second electrode and the second insulating layer, the first opening reaching the first electrode, a first oxide semiconductor layer in the first opening, the first oxide semiconductor layer being connected with the first electrode and the second electrode, a first gate electrode facing the first oxide semiconductor layer, and a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode.

公开(公告)号：US12213351B2

公开(公告)日：2025-01-28

申请号：US17570396

申请日：2022-01-07

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Toshinari Sasaki ,  Ryo Onodera

IPC: H10K59/124 ,  H10K59/121

Abstract: According to one embodiment, in a first concentration of an impurity element contained in a first impurity region, a second concentration of the impurity element contained in a second impurity region, a third concentration of the impurity element contained in a third impurity region, and a fourth concentration of the impurity element contained in a high-concentration impurity region, the third concentration is equal to the fourth concentration, the third concentration is higher than the first concentration, and the first concentration is higher than the second concentration.

公开(公告)号：US12176438B2

公开(公告)日：2024-12-24

申请号：US17549882

申请日：2021-12-14

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Kentaro Miura ,  Toshinari Sasaki ,  Takeshi Sakai ,  Akihiro Hanada ,  Masashi Tsubuku

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor. The oxide semiconductor includes a first edge portion and a second edge portion intersecting a gate electrode, a first area overlapping the gate electrode, a second area along the first edge portion, a third area along the second edge portion, a fourth area the first edge portion, a fifth area along the second edge portion, a sixth area surrounded by the first area, the second area and the third area, and a seventh area surrounded by the first area, the fourth area and the fifth area. The first area, the second area and the third area, the fourth area and the fifth area have a higher resistivity than those of the sixth area and the seventh area.

公开(公告)号：US12094980B2

公开(公告)日：2024-09-17

申请号：US17483836

申请日：2021-09-24

Applicant: Japan Display Inc.

Inventor： Tatsuya Toda ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC: H01L27/12 ,  G01N23/20091 ,  H01L29/786

CPC classification number: H01L29/7869 ,  G01N23/20091 ,  H01L27/1225 ,  H01J2237/2442

Abstract: A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

公开(公告)号：US11887980B2

公开(公告)日：2024-01-30

申请号：US17881106

申请日：2022-08-04

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki

IPC: H01L29/06 ,  H01L27/02 ,  G09G3/20 ,  H01L29/739 ,  H01L29/861 ,  H01L29/66 ,  H01L29/45 ,  H01L29/872 ,  H01L23/482 ,  H01L23/485 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L27/0255 ,  G09G3/20 ,  H01L23/482 ,  H01L23/485 ,  H01L29/42376 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7391 ,  H01L29/861 ,  H01L29/872 ,  G09G2300/0885 ,  G09G2330/04 ,  G09G2330/08 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/24

Abstract: A diode having a simple structure and a simple manufacturing method of the diode are provided. A diode including: a semiconductor layer having a first region and a second region having a resistance lower than a resistance of the first region; a first insulating layer having a first aperture portion and a second aperture portion and covering the semiconductor layer other than the first aperture and the second aperture, the first aperture portion exposing the semiconductor layer in the first region, the second aperture portion exposing the semiconductor layer in the second region; a first conductive layer connected to the semiconductor layer in the first aperture portion and overlapping with the semiconductor layer in the first region via the first insulating layer in a planar view; and a second conductive layer connected to the semiconductor layer in the second aperture.

公开(公告)号：US09859309B2

公开(公告)日：2018-01-02

申请号：US15241443

申请日：2016-08-19

Applicant: Japan Display Inc.

Inventor： Takenori Hirota ,  Hidekazu Miyake ,  Toshinari Sasaki ,  Shinichiro Oka

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786

CPC classification number: H01L27/1262 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/54 ,  G02F2202/02 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/7869

Abstract: A display device in an embodiment according to the present invention includes a first substrate, a second substrate opposing the first substrate, and a transistor provided in the first substrate, a scanning signal line, a video signal line, and a pixel electrode that are electrically connected to the transistor, and a first insulating layer. The thickness of the first substrate is 0.3 mm or less, the first insulating layer contacts the first substrate, and is provided between the first substrate and the transistor, and the first insulating layer includes an organic insulating layer.