Invention Grant
- Patent Title: Test circuit
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Application No.: US17440114Application Date: 2021-07-07
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Publication No.: US11894087B2Publication Date: 2024-02-06
- Inventor: MinNa Li
- Applicant: ChangXin Memory Technologies, Inc.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Alston & Bird LLP
- Priority: CN 2110160891.7 2021.02.05
- International Application: PCT/CN2021/105067 2021.07.07
- International Announcement: WO2022/166107A 2022.08.11
- Date entered country: 2021-09-16
- Main IPC: G11C29/38
- IPC: G11C29/38 ; G11C29/18

Abstract:
The disclosed test circuit includes: an input terminal, a processing circuit, and an output terminal. The input terminal receives an input signal. The input signal includes a test command for indicating a test target circuit module and an address of the target circuit module. The processing circuit responds to the test command and the target. The address of the circuit module determines the test mode signal, the test mode signal carries the test type, the test mode signal is used to trigger the target circuit module to perform the test corresponding to the test type, and the output terminal sends the test mode signal to the target circuit module according to the address of the target circuit module. Thus, the test mode signal can be accurately transmitted to different circuit modules in the memory chip.
Public/Granted literature
- US20230197179A1 TEST CIRCUIT Public/Granted day:2023-06-22
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