High voltage gallium oxide (Ga

Invention Grant

US11894468B2 High voltage gallium oxide (Ga 有权

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Patent Title: High voltage gallium oxide (Ga
Application No.: US17291689

Application Date: 2019-10-30
Publication No.: US11894468B2

Publication Date: 2024-02-06
Inventor: Wenshen Li , Zongyang Hu , Kazuki Nomoto , Debdeep Jena , Huili Grace Xing
Applicant: Cornell University
Applicant Address: US NY Ithaca
Assignee: Cornell University
Current Assignee: Cornell University
Current Assignee Address: US NY Ithaca
Agency: Culhane Meadows PLLC
Agent Orlando Lopez
International Application: PCT/US2019/058864 2019.10.30
International Announcement: WO2020/096838A 2020.05.14
Date entered country: 2021-05-06
Main IPC: H01L29/872
IPC: H01L29/872 ; H01L29/24 ; H01L29/36 ; H01L29/40 ; H01L29/66

Abstract:

Described herein are the design and fabrication of Group III trioxides, such as β-Ga2O3, trench-MOS barrier Schottky (TMBS) structures with high voltage (>1 kV), low leakage capabilities, while addressing on the necessary methods to meet the requirements unique to Group III trioxides, such as β-Ga2O3.

Public/Granted literature

US20210384362A1 HIGH VOLTAGE GALLIUM OXIDE (GA2O3) TRENCH MOS BARRIER SCHOTTKY AND METHODS OF FABRICATING SAME Public/Granted day:2021-12-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/861	...二极管
H01L29/872	....肖特基二极管