Invention Grant
- Patent Title: Integrated circuit structure and fabrication method thereof
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Application No.: US17160400Application Date: 2021-01-28
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Publication No.: US11901318B2Publication Date: 2024-02-13
- Inventor: Aaron Chen , Chi Ren , Yi Hsin Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110034672.4 2021.01.12
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/522 ; H01L23/532

Abstract:
An integrated circuit structure includes a substrate with a circuit region thereon and a copper interconnect structure disposed on the substrate. The copper interconnect structure includes an uppermost copper layer covered by a dielectric layer. An aluminum pad layer is provided on the dielectric layer. A metal layer is provided on the circuit region and is located between the uppermost copper layer and the aluminum pad layer.
Public/Granted literature
- US20220262749A1 INTEGRATED CIRCUIT STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2022-08-18
Information query
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