Invention Grant
- Patent Title: MFM capacitor and process for forming such
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Application No.: US16369737Application Date: 2019-03-29
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Publication No.: US11901400B2Publication Date: 2024-02-13
- Inventor: Nazila Haratipour , Chia-Ching Lin , Sou-Chi Chang , Ashish Verma Penumatcha , Owen Loh , Mengcheng Lu , Seung Hoon Sung , Ian A. Young , Uygar Avci , Jack T. Kavalieros
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01G4/012 ; H01G4/30 ; H01L23/522 ; H10B51/00
Abstract:
A capacitor is disclosed that includes a first metal layer and a seed layer on the first metal layer. The seed layer includes a polar phase crystalline structure. The capacitor also includes a ferroelectric layer on the seed layer and a second metal layer on the ferroelectric layer.
Public/Granted literature
- US20200312950A1 MFM CAPACITOR AND PROCESS FOR FORMING SUCH Public/Granted day:2020-10-01
Information query
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