Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US17383264Application Date: 2021-07-22
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Publication No.: US11923825B2Publication Date: 2024-03-05
- Inventor: Cheng-Yuan Kung , Meng-Wei Hsieh
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: FOLEY & LARDNER LLP
- Main IPC: H03H9/05
- IPC: H03H9/05 ; H01L23/552 ; H03H9/10 ; H03H9/54 ; H05K3/34 ; H01L23/00
Abstract:
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.
Public/Granted literature
- US20230024293A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2023-01-26
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