Invention Grant
- Patent Title: Semiconductor mixed material and application thereof
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Application No.: US16950600Application Date: 2020-11-17
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Publication No.: US11950491B2Publication Date: 2024-04-02
- Inventor: Yi-Ming Chang , Chuang-Yi Liao , Wei-Long Li , Yu-Tang Hsiao , Chun-Chieh Lee , Chia-Hua Li , Huei-Shuan Tan
- Applicant: Raynergy Tek Incorporation
- Applicant Address: TW Hsinchu
- Assignee: RAYNERGY TEK INCORPORATION
- Current Assignee: RAYNERGY TEK INCORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Priority: TW 9114201 2020.04.28
- Main IPC: H10K85/10
- IPC: H10K85/10 ; C07D495/22 ; C08G61/12 ; C08K3/04 ; C08K5/45 ; C08K5/46 ; C08K13/06 ; H10K85/20 ; H10K85/60 ; H10K30/30

Abstract:
A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, π-π*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.
Public/Granted literature
- US20210336148A1 SEMICONDUCTOR MIXED MATERIAL AND APPLICATION THEREOF Public/Granted day:2021-10-28
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