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    Structure of the photodiode
    1.
    发明授权
    Structure of the photodiode 有权

    公开(公告)号：US12302682B2

    公开(公告)日：2025-05-13

    申请号：US17892735

    申请日：2022-08-22

    Applicant: RAYNERGY TEK INCORPORATION

    Inventor： Yi-Ming Chang ,  Kuen-Wei Tsai

    IPC: H10K30/82

    Abstract: The present invention relates to a structure of photodiode, which comprises a substrate, a first electrode, an electron transport layer, a photoactive layer, a filter layer, and a second electrode. The first electrode is disposed on the substrate. The electron transport layer is disposed on the first electrode. The photoactive layer is disposed on the electron transport layer. The photoactive layer has a first energy gap value. The filter layer is disposed on the photoactive layer and has a second energy gap value. The second electrode is disposed on the filter layer. The second energy gap value is greater than the first energy gap value. The ratio of the second energy gap value to the first energy gap value is an energy gap ratio. The energy gap ratio is greater than 1 and less than or equal to 3.

    ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC PHOTOVOLATIC DEVICE USING THE SAME
    3.
    发明申请
    ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC PHOTOVOLATIC DEVICE USING THE SAME 审中-公开

    公开(公告)号：US20200328361A1

    公开(公告)日：2020-10-15

    申请号：US16845944

    申请日：2020-04-10

    Applicant: Raynergy Tek Incorporation

    Inventor： Chain-Shu Hsu ,  Jun-Yan Yu ,  You-Wei Lin ,  Kuan-Lin Peng ,  Yi-Ming Chang ,  Chuang-Yi Liao ,  Huei Shuan Tan

    IPC: H01L51/00 ,  C07F7/08 ,  C07D495/14

    Abstract: Organic photoelectric device comprises a first electrode, a first carrier transfer layer, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one organic semiconductor material including a structure such as Formula I: The second carrier transfer layer is composed between the active layer and the second electrode. When X1 and X2 are selected from one of Si, Ge and derivatives thereof, the active layer further includes an organic solvent, and the solubility of the organic solvent to the active layer is not less than 5 mg/mL. When X1 and X2 are selected from one of C and its derivatives, the active layer further includes an additive. The power conversion efficiency of the organic photoelectric device of the present invention can be up to more than 14%.

    Electronic device and manufacturing method of the same
    4.
    发明授权
    Electronic device and manufacturing method of the same 有权

    公开(公告)号：US12094996B2

    公开(公告)日：2024-09-17

    申请号：US17575019

    申请日：2022-01-13

    Applicant: Raynergy Tek Incorporation ,  Shinera Co., Ltd.

    Inventor： Yi-Ming Chang ,  Chun-Chieh Lee ,  Jui-Chih Kao ,  Nai-Wei Teng

    IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0392

    CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/0392 ,  H01L31/1852

    Abstract: An electronic device includes a substrate, a plurality of electronic components and a conductive material. The electronic components are arranged on the substrate, and the electronic components respectively include a lower electrode, a semiconductor layer and an upper electrode, and they are sequentially stacked on the substrate. The electronic components share the semiconductor layer, and the semiconductor layer forms a plurality of connecting channels through the semiconductor layer. The connecting channels are located between the upper electrode of the first electronic component in the electronic components and the lower electrode of the second electronic component in the electronic components. These connecting channels are processed by lasers of different powers. The conductive material is arranged in the connecting channel so that the upper electrode of the first electronic component is electrically connected to the lower electrode of the second electronic component.

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