Invention Grant
- Patent Title: Methods and systems for maskless lithography
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Application No.: US17793726Application Date: 2020-12-28
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Publication No.: US11953835B2Publication Date: 2024-04-09
- Inventor: Erwin John Van Zwet
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman, LLP
- Priority: EP 156258 2020.02.07
- International Application: PCT/EP2020/087921 2020.12.28
- International Announcement: WO2021/155994A 2021.08.12
- Date entered country: 2022-07-19
- Main IPC: G03F7/00
- IPC: G03F7/00

Abstract:
Method of exposing a substrate by a patterned radiation beam, comprising: —providing a radiation beam; —imparting the radiation beam by an array of individually controllable elements; —generating, from the radiation beam, a patterned radiation beam, by tilting the individually controllable elements between different positions about a tilting axis; —projecting the patterned radiation beam towards a substrate; —scanning a substrate across the patterned radiation beam in a scanning direction so as to expose the substrate to the patterned radiation beam, whereby the tilting axis of the individually controllable elements is substantially perpendicular to the scanning direction.
Public/Granted literature
- US20230061967A1 METHODS AND SYSTEMS FOR MASKLESS LITHOGRAPHY Public/Granted day:2023-03-02
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