Invention Grant
- Patent Title: Methods and apparatus for controlling RF parameters at multiple frequencies
-
Application No.: US18088310Application Date: 2022-12-23
-
Publication No.: US11956883B2Publication Date: 2024-04-09
- Inventor: Zheng John Ye , Daemian Raj Benjamin Raj , Shailendra Srivastava , Nikhil Sudhindrarao Jorapur , Ndanka O. Mukuti , Dmitry A. Dzilno , Juan Carlos Rocha
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H05H1/46
Abstract:
A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.
Public/Granted literature
- US20230131809A1 Methods and Apparatus for Controlling RF Parameters at Multiple Frequencies Public/Granted day:2023-04-27
Information query
