公开(公告)号：US20230131809A1

公开(公告)日：2023-04-27

申请号：US18088310

申请日：2022-12-23

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Shailendra Srivastava ,  Nikhil Sudhindrarao Jorapur ,  Ndanka O. Mukuti ,  Dmitry A. Dzilno ,  Juan Carlos Rocha

IPC: H05H1/46 ,  H01J37/32

Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

公开(公告)号：US11530482B2

公开(公告)日：2022-12-20

申请号：US16894355

申请日：2020-06-05

Applicant: Applied Materials, Inc.

Inventor： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US12159785B2

公开(公告)日：2024-12-03

申请号：US18464805

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj Benjamin Raj ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Abhigyan Keshri ,  Allison Yau

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H10B41/20 ,  H10B43/20

Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

公开(公告)号：US11851759B2

公开(公告)日：2023-12-26

申请号：US18083173

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/4583 ,  C23C16/45536 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32458 ,  H01J2237/3321

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20210059037A1

公开(公告)日：2021-02-25

申请号：US16997053

申请日：2020-08-19

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Shailendra Srivastava ,  Nikhil Sudhindrarao Jorapur ,  Ndanka O. Mukuti ,  Dmitry A. Dzilno ,  Juan Carlos Rocha

IPC: H05H1/46 ,  H01J37/32

Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

公开(公告)号：US11798803B2

公开(公告)日：2023-10-24

申请号：US16844794

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj Benjamin Raj ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Abhigyan Keshri ,  Allison Yau

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H10B41/20 ,  H10B43/20

CPC classification number: H01L21/022 ,  C23C16/4583 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02274 ,  H10B41/20 ,  H10B43/20

Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

公开(公告)号：US11776835B2

公开(公告)日：2023-10-03

申请号：US17036048

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Rana Howlader ,  Abhigyan Keshri ,  Sanjay G. Kamath ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Shailendra Srivastava ,  Kristopher R. Enslow ,  Xinhai Han ,  Deenesh Padhi ,  Edward P. Hammond

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32183 ,  H01J37/32697 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67103

Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

公开(公告)号：US11570879B2

公开(公告)日：2023-01-31

申请号：US16997053

申请日：2020-08-19

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Shailendra Srivastava ,  Nikhil Sudhindrarao Jorapur ,  Ndanka O. Mukuti ,  Dmitry A. Dzilno ,  Juan Carlos Rocha

IPC: H01J37/32 ,  H05H1/46

Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

公开(公告)号：US11501993B2

公开(公告)日：2022-11-15

申请号：US16936042

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Jian Li ,  Juan Carlos Rocha-Alvarez ,  Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Shailendra Srivastava ,  Xinhai Han ,  Deenesh Padhi ,  Kesong Hu ,  Chuan Ying Wang

IPC: H01L21/683 ,  H01L21/50 ,  H02N13/00 ,  H01L21/60

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.

公开(公告)号：US12094689B2

公开(公告)日：2024-09-17

申请号：US16932794

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Sai Susmita Addepalli ,  Yue Chen ,  Abhigyan Keshri ,  Qiang Ma ,  Zhijun Jiang ,  Shailendra Srivastava ,  Daemian Raj Benjamin Raj ,  Ganesh Balasubramanian

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  H01L21/67

CPC classification number: H01J37/32449 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32357 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069

Abstract: Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.