Invention Grant
- Patent Title: Memory sub-system for memory cell touch-up
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Application No.: US17747761Application Date: 2022-05-18
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Publication No.: US11967386B2Publication Date: 2024-04-23
- Inventor: Bin Wang , Pitamber Shukla , Scott A. Stoller
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/10 ; G11C16/34
Abstract:
An apparatus can include a touch-up component. The touch-up component can detect that at least one memory cell of a page of memory cells has lost a portion of a charge. The touch-up component can set touch-up parameters for the page of memory cells. The touch-up component can cause a transfer of data from the page of memory cells to a cache. The touch-up component can reprogram the at least one memory cell using the set touch-up parameters.
Public/Granted literature
- US20230377664A1 MEMORY SUB-SYSTEM FOR MEMORY CELL TOUCH-UP Public/Granted day:2023-11-23
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