A method for forming a device includes forming a hole pattern in a resist layer disposed over a substrate. The substrate includes contact regions disposed over a major surface of the substrate and a dielectric layer disposed over the contact regions. The resist layer is disposed over the dielectric layer and the hole pattern includes through openings in the resist layer that are aligned with the contact regions. The through openings include a first through opening having a first critical dimension and a second through opening having a second critical dimension greater than the first critical dimension. The method includes modifying the hole pattern by depositing a material including silicon within the through openings by exposing the hole pattern to a first plasma generated from a gas mixture including SiCl4 and hydrogen, and then etching holes in the dielectric layer through the modified hole pattern, exposing the contact regions.