Invention Grant
- Patent Title: Semiconductor structure and method for forming the same
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Application No.: US17576606Application Date: 2022-01-14
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Publication No.: US11978638B2Publication Date: 2024-05-07
- Inventor: Chang-Hung Lin
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW Taichung
- Agency: MUNCY, GEISSLER, OLDS & LOWE, PC
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/762 ; H01L27/108 ; H10B12/00
Abstract:
A method for forming a semiconductor structure forming a blocking structure in the periphery region over the bottom layer. The method includes covering the middle layer over the bottom layer and the blocking structure. The method includes forming a patterned photoresist layer over the middle layer. The patterned photoresist layer is in the array region and directly over the blocking structure in the periphery region. The method includes transferring the pattern of the patterned photoresist layer to the bottom layer. The pattern of the patterned photoresist layer directly over the blocking structure is not formed in the bottom layer. The first portion of the substrate is in the array region and is an active area array. The second portion of the substrate is in the periphery region and is a guard ring. The third portion of the substrate is in the periphery region and is a periphery structure.
Public/Granted literature
- US20230230841A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2023-07-20
Information query
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