Invention Grant
- Patent Title: Semiconductor circuit
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Application No.: US17793847Application Date: 2020-12-16
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Publication No.: US11984885B2Publication Date: 2024-05-14
- Inventor: Noriyuki Nosaka , Chen Chen , Takanori Ishii , Wataru Okada
- Applicant: OMRON Corporation
- Applicant Address: JP Kyoto
- Assignee: OMRON CORPORATION
- Current Assignee: OMRON CORPORATION
- Current Assignee Address: JP Kyoto
- Agency: ROSSI, KIMMS & McDOWELL LLP
- Priority: JP 20017176 2020.02.04
- International Application: PCT/JP2020/046903 2020.12.16
- International Announcement: WO2021/157207A 2021.08.12
- Date entered country: 2022-07-19
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H02M1/08 ; H02M7/537

Abstract:
A semiconductor circuit includes: a first inductor part configured to connect in series with a source electrode of a first semiconductor element; and a second inductor part configured to connect in series with a source electrode in a second semiconductor element that is configured to connect in parallel with the first semiconductor element; the first inductor part and the second inductor part are arranged to generate an induced electromotive force in the first inductor part and the second inductor part by way of a magnetic interaction so that the currents flowing in the first inductor part and the second inductor part are reinforced in the same direction.
Public/Granted literature
- US20230043841A1 SEMICONDUCTOR CIRCUIT Public/Granted day:2023-02-09
Information query
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