Invention Grant
- Patent Title: Quantum dot electroluminescence device
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Application No.: US18128470Application Date: 2023-03-30
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Publication No.: US11997917B2Publication Date: 2024-05-28
- Inventor: Yusaku Konishi , Takahiro Fujiyama , Fumiaki Kato , Keigo Furuta , Kiyohiko Tsutsumi , Masashi Tsuji , Takao Motoyama
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agency: CANTOR COLBURN LLP
- Priority: JP 18248419 2018.12.28 KR 20190176495 2019.12.27
- The original application number of the division: US16729646 2019.12.30
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/50 ; H10K50/115 ; H10K50/15 ; H10K50/16 ; H10K85/10

Abstract:
A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.
Public/Granted literature
- US20240114765A1 QUANTUM DOT ELECTROLUMINESCENCE DEVICE Public/Granted day:2024-04-04
Information query
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