Invention Publication
- Patent Title: QUANTUM DOT ELECTROLUMINESCENCE DEVICE
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Application No.: US18128470Application Date: 2023-03-30
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Publication No.: US20240114765A1Publication Date: 2024-04-04
- Inventor: Yusaku KONISHI , Takahiro FUJIYAMA , Fumiaki KATO , Keigo FURUTA , Kiyohiko TSUTSUMI , Masashi TSUJI , Takao MOTOYAMA
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Priority: JP 18248419 2018.12.28 KR 20190176495 2019.12.27
- The original application number of the division: US16729646 2019.12.30
- Main IPC: H10K85/10
- IPC: H10K85/10

Abstract:
A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.
Public/Granted literature
- US11997917B2 Quantum dot electroluminescence device Public/Granted day:2024-05-28
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