Invention Grant
- Patent Title: Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
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Application No.: US18163828Application Date: 2023-02-02
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Publication No.: US12000047B2Publication Date: 2024-06-04
- Inventor: Rachel E. Batzer , Huatan Qiu , Bhadri N. Varadarajan , Patrick Girard Breiling , Bo Gong , Will Schlosser , Zhe Gui , Taide Tan , Geoffrey Hohn
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- The original application number of the division: US15378854 2016.12.14
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/455 ; C23C16/505 ; H01L21/67 ; H01L21/687 ; B05C13/02 ; C23C16/458

Abstract:
A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
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