Invention Grant
- Patent Title: Semiconductor device and power conversion device
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Application No.: US17606048Application Date: 2019-06-25
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Publication No.: US12000883B2Publication Date: 2024-06-04
- Inventor: Yukihiko Wada
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2019/025170 2019.06.25
- International Announcement: WO2020/261385A 2020.12.30
- Date entered country: 2021-10-25
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/28 ; H01L23/00 ; H01L23/495 ; H01L29/739 ; H02M1/08 ; H02M7/5387 ; H02P27/08

Abstract:
A deteriorated section identifying unit refers to correspondence information that defines a deteriorated section of a plurality of bonding sections to the emitter electrode surface to which the first bonding wires are connected, for a combination of temporal change of a first voltage that is a difference between a potential at a collector main terminal and a potential at the emitter main terminal and temporal change of a second voltage that is a difference between a potential at the emitter reference terminal and a potential at the emitter main terminal, and identifies the deteriorated section corresponding to a combination of temporal change of the first voltage measured by a first voltage measuring circuit and temporal change of the second voltage measured by a second voltage measuring circuit.
Public/Granted literature
- US20220206057A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2022-06-30
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