Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US17645131Application Date: 2021-12-20
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Publication No.: US12002781B2Publication Date: 2024-06-04
- Inventor: Takayuki Ohba
- Applicant: TOKYO INSTITUTE OF TECHNOLOGY
- Applicant Address: JP Tokyo
- Assignee: TOKYO INSTITUTE OF TECHNOLOGY
- Current Assignee: TOKYO INSTITUTE OF TECHNOLOGY
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP 20217061 2020.12.25
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/00 ; H01L25/065

Abstract:
A first substrate having a first face and a second face is prepared. The first face has a plurality of product regions defined thereon. An electrode pad forming side of each of a semiconductor chip stack and a semiconductor chip is attached to each corresponding product region of the plurality of product regions. The second face of the first substrate is thinned. A first inorganic insulating layer is formed on the second face. A first vertical interconnection penetrates the first inorganic insulating layer and the first substrate and is electrically connected to an electrode pad of the semiconductor chip stack. A second vertical interconnection penetrates the first inorganic insulating layer and the first substrate and is electrically connected to an electrode pad of the semiconductor chip. A first horizontal interconnection electrically connects a part of the first vertical interconnection to a part of the second vertical interconnection.
Public/Granted literature
- US20220208710A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2022-06-30
Information query
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