Invention Grant
- Patent Title: Semiconductor device including graphene and method of manufacturing the semiconductor device
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Application No.: US17087968Application Date: 2020-11-03
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Publication No.: US12027589B2Publication Date: 2024-07-02
- Inventor: Keunwook Shin , Hyeonjin Shin , Yeonchoo Cho , Seunggeol Nam , Seongjun Park , Yunseong Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20170068664 2017.06.01
- Main IPC: H01L29/16
- IPC: H01L29/16 ; C01B32/186 ; H01L21/02
Abstract:
Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.
Public/Granted literature
- US20210074815A1 SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2021-03-11
Information query
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