A silicon carbide semiconductor device includes a drift layer of n-type formed on a semiconductor substrate composed of silicon carbide, a well region of p-type formed on a surface portion of the drift layer, a source region of p-type formed on a surface portion of the well region, a gate insulating film formed in contact with the source region, the well region, and the drift layer, and a gate electrode formed on the gate insulating film. In the silicon carbide semiconductor device, oxygen is contained in a region having a predetermined thickness from an interface between the well region and the gate insulating film toward the well regions side.