Invention Grant
- Patent Title: Photonic structure and method for forming the same
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Application No.: US18165098Application Date: 2023-02-06
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Publication No.: US12032204B2Publication Date: 2024-07-09
- Inventor: Chan-Hong Chern , Min-Hsiang Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G02B6/136
- IPC: G02B6/136 ; G02B6/122 ; G02B6/12

Abstract:
A photonic structure is provided. The photonic structure includes a semiconductor substrate, and an oxide structure embedded in the semiconductor substrate, and an optical coupling region directly above the buried oxide layer. A side surface of the oxide structure is exposed from an edge of the semiconductor substrate. The optical coupling region is tapered to a terminus of the optical coupling region at the edge of the semiconductor substrate.
Public/Granted literature
- US20230185024A1 PHOTONIC STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2023-06-15
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