Invention Publication
- Patent Title: PHOTONIC STRUCTURE AND METHOD FOR FORMING THE SAME
-
Application No.: US18165098Application Date: 2023-02-06
-
Publication No.: US20230185024A1Publication Date: 2023-06-15
- Inventor: Chan-Hong CHERN , Min-Hsiang HSU
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: G02B6/136
- IPC: G02B6/136 ; G02B6/122

Abstract:
A photonic structure is provided. The photonic structure includes a semiconductor substrate, and an oxide structure embedded in the semiconductor substrate, and an optical coupling region directly above the buried oxide layer. A side surface of the oxide structure is exposed from an edge of the semiconductor substrate. The optical coupling region is tapered to a terminus of the optical coupling region at the edge of the semiconductor substrate.
Public/Granted literature
- US12032204B2 Photonic structure and method for forming the same Public/Granted day:2024-07-09
Information query