A semiconductor storage device capable of achieving low power and high integration is provided. A non-volatile semiconductor memory of the disclosure includes a memory cell array. The memory cell array has a NOR array with a NOR flash memory structure and a variable resistance array with a variable resistance memory structure formed on a substrate. An entry gate is formed between the NOR array and the variable resistance array. When the NOR array is accessed, the entry gate separates the variable resistance array from the NOR array.