Invention Grant
- Patent Title: Selectively roughened copper architectures for low insertion loss conductive features
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Application No.: US17033392Application Date: 2020-09-25
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Publication No.: US12033930B2Publication Date: 2024-07-09
- Inventor: Jieying Kong , Yiyang Zhou , Suddhasattwa Nad , Jeremy Ecton , Hongxia Feng , Tarek Ibrahim , Brandon Marin , Zhiguo Qian , Sarah Blythe , Bohan Shan , Jason Steill , Sri Chaitra Jyotsna Chavali , Leonel Arana , Dingying Xu , Marcel Wall
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48

Abstract:
An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.
Public/Granted literature
- US20220102259A1 SELECTIVELY ROUGHENED COPPER ARCHITECTURES FOR LOW INSERTION LOSS CONDUCTIVE FEATURES Public/Granted day:2022-03-31
Information query
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