Invention Grant
- Patent Title: Methods for forming a semiconductor structure and related semiconductor structures
-
Application No.: US17145499Application Date: 2021-01-11
-
Publication No.: US12040184B2Publication Date: 2024-07-16
- Inventor: David Kohen , Harald Benjamin Profijt , Andrew Kretzschmar
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- The original application number of the division: US15798201 2017.10.30
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/02 ; H01L29/165 ; H10B43/27
Abstract:
A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
Public/Granted literature
- US20210134588A1 METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE AND RELATED SEMICONDUCTOR STRUCTURES Public/Granted day:2021-05-06
Information query
IPC分类:
