- Patent Title: Fluorine-free tungsten ALD for dielectric selectivity improvement
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Application No.: US17339454Application Date: 2021-06-04
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Publication No.: US12062545B2Publication Date: 2024-08-13
- Inventor: Ilanit Fisher , Chi-Chou Lin , Kedi Wu , Wen Ting Chen , Shih Chung Chen , Srinivas Gandikota , Mandyam Sriram , Chenfei Shen , Naomi Yoshida , He Ren
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C23C16/02 ; C23C16/04 ; C23C16/14 ; C23C16/455 ; H01L21/02
Abstract:
Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.
Public/Granted literature
- US20210384036A1 FLUORINE-FREE TUNGSTEN ALD FOR DIELECTRIC SELECTIVITY IMPROVEMENT Public/Granted day:2021-12-09
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