公开(公告)号：US12062545B2

公开(公告)日：2024-08-13

申请号：US17339454

申请日：2021-06-04

Applicant: Applied Materials, Inc.

Inventor： Ilanit Fisher ,  Chi-Chou Lin ,  Kedi Wu ,  Wen Ting Chen ,  Shih Chung Chen ,  Srinivas Gandikota ,  Mandyam Sriram ,  Chenfei Shen ,  Naomi Yoshida ,  He Ren

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45553 ,  H01L21/02068

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

公开(公告)号：US20230313378A1

公开(公告)日：2023-10-05

申请号：US17709931

申请日：2022-03-31

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Lei Zhou ,  Muhannad Mustafa ,  Shih Chung Chen ,  Zhihui Liu ,  Chi-Chou Lin ,  Bin Cao ,  Janardhan Devrajan ,  Mario D. Silvetti ,  Mandyam Sriram

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/45544

Abstract: Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.

公开(公告)号：US11658218B2

公开(公告)日：2023-05-23

申请号：US17668992

申请日：2022-02-10

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/408 ,  H01L21/0228 ,  H01L21/02153 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20230113514A1

公开(公告)日：2023-04-13

申请号：US17541702

申请日：2021-12-03

Applicant: Applied Materials, Inc.

Inventor： Shih Chung Chen ,  Yongjing Lin ,  Chi-Chou Lin ,  Zhiyong Wang ,  Chih-Hsun Hsu ,  Mandyam Sriram ,  Tza-Jing Gung

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

Abstract: Processing methods described herein comprise forming a metal gate film on a narrow feature and a wide feature and depositing a hard mask on the metal gate film. The hard mask forms on the metal gate film at a top, bottom and sidewalls of the wide feature and on a top of the narrow feature to cover the metal gate film. Some processing methods comprise oxidizing the metal gate film on the narrow feature to convert a portion of the metal gate film to a metal oxide film. Some processing methods comprise etching the metal oxide film from the narrow feature to leave a gradient etch profile. Some processing methods comprise filling the narrow feature and the wide feature with a gap fill material comprising one or more of a metal nitride, titanium nitride (TiN) or titanium oxynitride (TiON), the gap fill material substantially free of seams and voids.

公开(公告)号：US20220367236A1

公开(公告)日：2022-11-17

申请号：US17497881

申请日：2021-10-08

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Yongjing Lin ,  Satish Radhakrishnan ,  Haoyan Sha ,  Shih Chung Chen ,  Mario D. Silvetti ,  Mandyam Sriram ,  Vijay D. Parkhe

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46

Abstract: Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.

公开(公告)号：US11888045B2

公开(公告)日：2024-01-30

申请号：US17557787

申请日：2021-12-21

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC: H01L29/51 ,  H01L29/40 ,  H01L29/49

CPC classification number: H01L29/513 ,  H01L29/401 ,  H01L29/4958 ,  H01L29/4966

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20220165854A1

公开(公告)日：2022-05-26

申请号：US17668992

申请日：2022-02-10

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAIN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAIC).

公开(公告)号：US20220115516A1

公开(公告)日：2022-04-14

申请号：US17557787

申请日：2021-12-21

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C.H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC: H01L29/51 ,  H01L29/40 ,  H01L29/49

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20220098731A1

公开(公告)日：2022-03-31

申请号：US17036209

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Kedi Wu ,  Chenfei Shen ,  Chi-Chou Lin ,  Ilanit Fisher ,  Shih Chung Chen ,  Mandyam Sriram ,  Srinivas Gandikota

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/06

Abstract: Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.

公开(公告)号：US20210384036A1

公开(公告)日：2021-12-09

申请号：US17339454

申请日：2021-06-04

Applicant: Applied Materials, Inc.

Inventor： Ilanit Fisher ,  Chi-Chou Lin ,  Kedi Wu ,  Wen Ting Chen ,  Shih Chung Chen ,  Srinivas Gandikota ,  Mandyam Sriram ,  Chenfei Shen ,  Naomi Yoshida ,  He Ren

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/14 ,  C23C16/04

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.