Invention Grant
- Patent Title: MEMS device with a TMD structure
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Application No.: US17647653Application Date: 2022-01-11
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Publication No.: US12063469B2Publication Date: 2024-08-13
- Inventor: Abidin Güçlü Onaran , Marc Fueldner , Dietmar Straeussnigg
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: EP 160096 2021.03.01
- Main IPC: H04R7/06
- IPC: H04R7/06 ; B81B3/00 ; H04R1/28 ; H04R7/16 ; H04R19/04
Abstract:
A MicroElectroMechanical (MEMS) device includes a suspended electrode structure anchored to a substrate, the MEMS device having a MEMS resonance mode, and a Tuned Mass Damping (TMD) structure, wherein a portion of the suspended electrode structure forms a TMD structure having a TMD spring element and a TMD mass element, for providing a TMD resonance mode counteracting the MEMS resonance mode.
Public/Granted literature
- US20220279270A1 MEMS DEVICE WITH A TMD STRUCTURE Public/Granted day:2022-09-01
Information query
