A method for manufacturing a resistive random access memory structure is provided. The method includes providing a substrate, and the substrate includes an array region and a peripheral region. The method includes forming a first low-k dielectric layer in the peripheral region, and the first low-k dielectric layer has a dielectric constant of less than 3. The method includes forming a plurality of memory cells on the substrate and in the array region. The method includes forming a dummy memory cell at a boundary between the array region and the peripheral region. The method includes forming a gap-filling dielectric layer on the substrate. The method includes forming a plurality of first conductive plugs in the gap-filling dielectric layer, and each of the plurality of first conductive plugs is in contact with one of the plurality of memory cells.