Invention Grant
- Patent Title: Radiation-emitting semiconductor chip
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Application No.: US18186037Application Date: 2023-03-17
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Publication No.: US12080827B2Publication Date: 2024-09-03
- Inventor: Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE 2016112587.3 2016.07.08
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/14 ; H01L33/20 ; H01L33/32 ; H01L33/40 ; H01L33/42 ; H01L33/44 ; H01L33/62 ; H01L33/08 ; H01L33/38

Abstract:
In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.
Public/Granted literature
- US20230231080A1 Radiation-Emitting Semiconductor Chip Public/Granted day:2023-07-20
Information query
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