Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18092096Application Date: 2022-12-30
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Publication No.: US12087897B2Publication Date: 2024-09-10
- Inventor: Mitsuaki Oya , Masanori Hiroki , Keimei Masamoto , Shigeo Hayashi
- Applicant: Nuvoton Technology Corporation Japan
- Applicant Address: JP Kyoto
- Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
- Current Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
- Current Assignee Address: JP Kyoto
- Agency: Rimon P.C.
- Priority: JP 18234349 2018.12.14
- Main IPC: H01L33/62
- IPC: H01L33/62 ; F21S41/141 ; F21S43/14 ; F21W103/55
Abstract:
A semiconductor device includes: a first electrode provided on a semiconductor multilayer structure: a second electrode provided on a substrate; and a bonding metal layer which bonds the first electrode and the second electrode together. The bonding metal layer includes a gap inside.
Public/Granted literature
- US20230146321A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-05-11
Information query
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