Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US18092096Application Date: 2022-12-30
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Publication No.: US20230146321A1Publication Date: 2023-05-11
- Inventor: Mitsuaki OYA , Masanori HIROKI , Keimei MASAMOTO , Shigeo HAYASHI
- Applicant: Nuvoton Technology Corporation Japan
- Applicant Address: JP Kyoto
- Assignee: Nuvoton Technology Corporation Japan
- Current Assignee: Nuvoton Technology Corporation Japan
- Current Assignee Address: JP Kyoto
- Priority: JP 18234349 2018.12.14
- Main IPC: H01L33/62
- IPC: H01L33/62
Abstract:
A semiconductor device includes: a first electrode provided on a semiconductor multilayer structure; a second electrode provided on a substrate; and a bonding metal layer which bonds the first electrode and the second electrode together. The bonding metal layer includes a gap inside.
Public/Granted literature
- US12087897B2 Semiconductor device Public/Granted day:2024-09-10
Information query
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