A memory and a sense amplifying device are provided. The sense amplifying device includes a differential amplifier, a first pre-charge circuit, and a control voltage generator. The differential amplifier has a first input terminal and a second input terminal to receive a data signal and a reference signal, respectively. The first pre-charge circuit is coupled to the first input terminal of the differential amplifier. The first pre-charge circuit, based on a power voltage, performs a pre-charge operation on the first input terminal of the differential amplifier according to a pre-charge enable signal and a control voltage. The control voltage generator generates the control voltage according to the power voltage, and the control voltage and the power voltage are in a positive correlation.