Invention Grant
- Patent Title: Nanosheet transistors with self-aligned gate cut
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Application No.: US17490266Application Date: 2021-09-30
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Publication No.: US12107014B2Publication Date: 2024-10-01
- Inventor: Julien Frougier , Huimei Zhou , Ruilong Xie , Chanro Park , Kangguo Cheng
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Samuel Waldbaum
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L21/8238 ; H01L27/092 ; H01L29/66
Abstract:
Semiconductor devices and methods of forming the same include a first device region, a second device region, and an inter-device dielectric spacer between the first device region and the second device region. The first device region includes a first device channel, a first-polarity work function metal layer on the first device channel, and a second-polarity work function metal layer on the first device channel. The second device region include a second device channel, and a second-polarity work function metal layer on the second device channel.
Public/Granted literature
- US20230099643A1 NANOSHEET TRANSISTORS WITH SELF-ALIGNED GATE CUT Public/Granted day:2023-03-30
Information query
IPC分类:
