Invention Grant
- Patent Title: Variable composition ternary compound semiconductor alloys, structures, and devices
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Application No.: US18401290Application Date: 2023-12-29
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Publication No.: US12107113B2Publication Date: 2024-10-01
- Inventor: Michael R. Krames
- Applicant: OPNOVIX CORP.
- Applicant Address: US CA Palo Alto
- Assignee: OPNOVIX CORP.
- Current Assignee: OPNOVIX CORP.
- Current Assignee Address: US CA Palo Alto
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
InxAlyGa1-x-yN semiconductor structures having optoelectronic elements characterized by epitaxial layers having different in-plane a-lattice parameters and different InN mole fractions are disclosed. The active regions are configured to emit radiation in different wavelength ranges and are characterized by strain states within about 1% to 2% of compressive strain. The epitaxial layers are grown on patterned InxAlyGa1-x-yN seed regions on a single substrate, where the relaxed InGaN growth layers provide (0001) InxAlyGa1-x-yN growth surfaces characterized by different in-plane a-lattice parameters and different InN mole fractions. InxAlyGa1-x-yN semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and in display applications.
Public/Granted literature
- US20240222416A1 VARIABLE COMPOSITION TERNARY COMPOUND SEMICONDUCTOR ALLOYS, STRUCTURES, AND DEVICES Public/Granted day:2024-07-04
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