Invention Grant
- Patent Title: Thin film structure and semiconductor device including the same
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Application No.: US18468394Application Date: 2023-09-15
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Publication No.: US12107140B2Publication Date: 2024-10-01
- Inventor: Jinseong Heo , Taehwan Moon , Seunggeol Nam , Sanghyun Jo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200057184 2020.05.13
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/28 ; H01L29/06 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L29/786 ; H01L49/02 ; H10B53/30
Abstract:
A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.
Public/Granted literature
- US20240006509A1 THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2024-01-04
Information query
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