Invention Grant
- Patent Title: Manufacturing method of capacitor structure including patterned conductive layer disposed between two electrodes
-
Application No.: US18123972Application Date: 2023-03-20
-
Publication No.: US12113098B2Publication Date: 2024-10-08
- Inventor: Chih-Tung Yeh , Kuang-Pi Lee , Wen-Jung Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110598854.4 2021.05.31
- The original application number of the division: US17359655 2021.06.28
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02

Abstract:
A capacitor structure includes an insulation layer and a capacitor unit disposed on the insulation layer. The capacitor unit includes a first electrode, a second electrode, a first dielectric layer, and a patterned conductive layer. The second electrode is disposed above the first electrode in a vertical direction. The first dielectric layer is disposed between the first electrode and the second electrode in the vertical direction. The patterned conductive layer is disposed between first electrode and the second electrode, the patterned conductive layer is electrically connected with the first electrode, and the first dielectric layer surrounds the patterned conductive layer in a horizontal direction.
Public/Granted literature
- US20230231003A1 MANUFACTURING METHOD OF CAPACITOR STRUCTURE Public/Granted day:2023-07-20
Information query
IPC分类: