Invention Grant
- Patent Title: Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same
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Application No.: US18119260Application Date: 2023-03-08
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Publication No.: US12132043B2Publication Date: 2024-10-29
- Inventor: Kuo-Hsing Lee , Sheng-Yuan Hsueh , Chien-Liang Wu , Te-Wei Yeh , Yi-Chun Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2010993249.2 2020.09.21
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/306 ; H01L21/765 ; H01L21/8252 ; H01L29/20 ; H01L29/205 ; H01L29/40 ; H01L29/66 ; H01L29/778 ; H01L49/02
Abstract:
A resistor-transistor-logic circuit with GaN structures, including a 2DEG resistor having a drain connected with an operating voltage, and a logic FET having a gate connected to an input voltage, a source grounded and a drain connected with a source of the 2DEG resistor and connected collectively to an output voltage.
Public/Granted literature
- US20230223400A1 RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-07-13
Information query
IPC分类:
