Invention Grant
- Patent Title: Highly textured 001 BiSb and materials for making same
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Application No.: US17855045Application Date: 2022-06-30
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Publication No.: US12176132B2Publication Date: 2024-12-24
- Inventor: Quang Le , Brian R. York , Cherngye Hwang , Xiaoyong Liu , Michael A. Gribelyuk , Xiaoyu Xu , Randy G. Simmons , Kuok San Ho , Hisashi Takano
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: PATTERSON + SHERIDAN, LLP
- Main IPC: H01F10/32
- IPC: H01F10/32 ; C23C8/12 ; C30B29/52 ; G11B5/00 ; G11B5/39 ; H10B61/00 ; H10N50/85 ; H10N52/00 ; H10N52/01 ; H10N52/80

Abstract:
The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.
Public/Granted literature
- US20240006109A1 Highly Textured 001 BiSb And Materials for Making Same Public/Granted day:2024-01-04
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