Invention Publication
- Patent Title: Highly Textured 001 BiSb And Materials for Making Same
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Application No.: US17855045Application Date: 2022-06-30
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Publication No.: US20240006109A1Publication Date: 2024-01-04
- Inventor: Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Xiaoyu XU , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01F10/32
- IPC: H01F10/32 ; C30B29/52 ; C23C8/12 ; H01L27/22 ; H01L43/04 ; H01L43/06 ; H01L43/10 ; H01L43/14 ; G11B5/39

Abstract:
The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.
Public/Granted literature
- US12176132B2 Highly textured 001 BiSb and materials for making same Public/Granted day:2024-12-24
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