Invention Grant
- Patent Title: Complementary metal-oxide-semiconductor image sensor and method of making
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Application No.: US18151917Application Date: 2023-01-09
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Publication No.: US12183767B2Publication Date: 2024-12-31
- Inventor: Bo-Tsung Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/265 ; H01L21/266 ; H01L29/78
Abstract:
A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region. The pixel further includes a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.
Public/Granted literature
- US20230197762A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR AND METHOD OF MAKING Public/Granted day:2023-06-22
Information query
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