Invention Publication
- Patent Title: COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR AND METHOD OF MAKING
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Application No.: US18151917Application Date: 2023-01-09
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Publication No.: US20230197762A1Publication Date: 2023-06-22
- Inventor: Bo-Tsung TSAI
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- The original application number of the division: US15718318 2017.09.28
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region. The pixel further includes a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.
Public/Granted literature
- US12183767B2 Complementary metal-oxide-semiconductor image sensor and method of making Public/Granted day:2024-12-31
Information query
IPC分类:
