Invention Grant
- Patent Title: Semiconductor memory apparatus and testing method thereof
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Application No.: US18171666Application Date: 2023-02-21
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Publication No.: US12190980B2Publication Date: 2025-01-07
- Inventor: Shao-Ching Liao , Chien-Min Wu , Kuang-Chih Hsieh
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Main IPC: G11C29/50
- IPC: G11C29/50

Abstract:
A semiconductor memory apparatus and a testing method thereof are provided. The semiconductor memory apparatus includes a memory chip and a memory controller. The memory controller is configured to detect an initial test voltage of a target memory cell corresponding to a tailing bit in a main array of the memory chip. After the memory chip is idle for a first time, the memory controller detects a first test voltage of the target memory cell and compares it with a current comparison voltage to determine whether a first stage test is passed. In a case of passing the first stage test, after the memory chip is idle for a second time, the memory controller detects a second test voltage of the target memory cell and compares it with the current comparison voltage to determine whether a second stage test is passed. The comparison voltage is dynamically updated in response to the time the memory chip is idle.
Public/Granted literature
- US20240282397A1 SEMICONDUCTOR MEMORY APPARATUS AND TESTING METHOD THEREOF Public/Granted day:2024-08-22
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