The present disclosure relates to a semiconductor device including a substrate, a first region disposed in the substrate, a terminal region disposed in the first region, a body contact region disposed in the first region and spaced apart from the terminal region, a dielectric layer disposed on the substrate over the first region between the terminal region and the body contact region, an electrically conductive layer disposed on the dielectric layer, and a continuous metallic layer disposed on the electrically conductive layer and extending to the body contact region, the continuous metallic layer disposed on the body contact region and in physical contact with a top and side portions of the electrically conductive layer. The semiconductor device may additionally include a body contact interconnect disposed on a portion of the continuous metallic layer over the electrically conductive layer.