Invention Grant
- Patent Title: Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structure
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Application No.: US17545442Application Date: 2021-12-08
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Publication No.: US12218217B2Publication Date: 2025-02-04
- Inventor: Yunseong Lee , Jinseong Heo , Taehwan Moon , Seunggeol Nam , Dukhyun Choe
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2021-0090490 20210709
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H10B51/00 ; H10B53/00

Abstract:
A layer structure including a dielectric layer, a method of manufacturing the layer structure, and an electronic device including the layer structure are disclosed. The layer structure including a lower layer, a dielectric layer, and an upper layer sequentially stacked. The dielectric layer includes sequentially stacked first, second, and third layers, wherein one of the first layer or the third layer is a ferroelectric, the other one is an anti-ferroelectric, and the second layer is an oxide layer. In one example, the dielectric layer may further include a fourth layer on the third layer.
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