Invention Grant
- Patent Title: Semiconductor module and power conversion apparatus
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Application No.: US17781713Application Date: 2020-02-06
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Publication No.: US12224220B2Publication Date: 2025-02-11
- Inventor: Ken Sakamoto , Haruko Hitomi , Kozo Harada , Seiki Hiramatsu
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2020/004613 WO 20200206
- International Announcement: WO2021/157024 WO 20210812
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L25/065 ; H01L25/07 ; H01L25/18 ; H02M7/5387 ; H01L23/29 ; H02M1/08

Abstract:
A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.
Public/Granted literature
- US20230024580A1 SEMICONDUCTOR MODULE AND POWER CONVERSION APPARATUS Public/Granted day:2023-01-26
Information query
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